Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

ABSTRACT

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM&#39;s feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

CLAIM FOR PRIORITY

The present application claims priority to U.S. patent application Ser.No. 17/089,214; titled Methods and Devices Configured to OperatedScanning Tunneling Microscopes using Out-Of-Bandwidth FrequencyComponents Added to Bias Voltage and Related Software filed in theU.S.P.T.O. on Nov. 4, 2020 which claims priority to U.S. ProvisionalPatent Application No. 62/930,383, titled System And Method ForMeasuring Capacitive Current In A Scanning Tunneling Microscope WithApplications To Lithography And Imaging, filed in the U.S.P.T.O. on Nov.4, 2019, the entire disclosures of which are hereby incorporated hereinby reference.

STATEMENT OF GOVERNMENT SUPPORT

This invention was made with government support under Grant No.FA8650-15-C-7542 awarded by the Air Force Research Laboratory and GrantNo. DE-EE0008322 awarded by the Department of Energy. The government hascertain rights in the invention.

FIELD

The present invention relates in general to the field of lithography,and more particularly, to nanolithography.

BACKGROUND

Imaging at the atomic-scale level is achievable with the scanningtunneling microscope (STM), an instrument that operates based on thequantum mechanical phenomenon known as tunneling. Ultrahigh vacuum (UHV)STM can be employed to investigate chemical, physical, and structuralproperties as well as surface characteristics with atomic resolution.The STM include an extremely sharp tip, which is displaced withinsub-nanometer distances from a conductive, or semiconductive, surfacewhile a bias voltage is applied between them. By bringing the tip veryclose to the surface, electrons tunnel through the tip-sample gap. Byfeedback control of the tunnel current, the tip height over the samplecan be maintained, and atomic-resolution imaging performed by moving thetip in a raster scan across the surface.

The STM can be used as a lithography tool to manipulate individual atomsat the nanoscale. Among various surfaces and materials that have beeninvestigated for nanolithography, considerable research has been devotedto the hydrogen-passivated Si<100> surface. Researchers' interest in thede-passivation of individual hydrogen atoms on hydrogen-terminatedsilicon surfaces is due to their unique properties. The siliconsubstrate can be used to fabricate conventional silicon-basedmicroelectronic devices, and the resist properties of hydrogenpassivation on semiconductors may enable fabrication of next-generationelectronic devices. Also, due to the reactivity and binding chemistriesof silicon, hydrogen atoms can be selectively removed and replaced withspecific atoms or molecules to achieve the desired properties.

Direct tip-sample interactions, current, and electric field have beenused for STM lithography. Field-emitted or tunneling electrons from theSTM tip are employed to bring about removal of hydrogen atoms from thehydrogen-terminated silicon surface. In the high-voltage (i.e., 6-10 V)regime, the electron's energy can exceed the threshold energy of theSi—H bond causing the removal of hydrogen atoms from the surface. Thedesorption yield can be constant in this regime and may be independentof current and voltage.

In the low-voltage regime, higher currents may be needed forde-passivation and the yield may be voltage and current dependent. Thereare some discrepancies in the literature regarding the desorptionmechanism in the low-voltage regime. Despite the underlyingde-passivation mechanism, resolutions down to the atomic level areachievable in low-voltage mode.

In some approaches, dangling bonds are created at specific sites (byremoval of hydrogen atoms) that can be filled later by specificmolecules or atoms. Upon the removal of a hydrogen atom from thehydrogen-terminated silicon surface, a sudden increase of tunnelingcurrent is observed due to the silicon's higher local density of statescompared to the hydrogen. This jump in the tunneling current iscompensated by the controller to maintain the current setpoint value,therefore, a desorption event can be evidenced by an increase in thetopography. Based on this observation, a feedback-controlled lithography(FCL) method was developed to remove single hydrogen atoms by activelymonitoring the topography signal and terminating the lithography processwhen a desorption event is detected.

While some nanopatterning lithography techniques use a positive samplebias voltage, it has been reported that hydrogen de-passivation occursfrom hydrogen-terminated silicon surfaces at negative sample biasvoltages. Compared to lithography at the positive sample bias voltages,significantly higher bias voltages (−4 V to −10 V) and tunnelingcurrents (1 nA to 10 nA) are used at negative voltage scheme, which willultimately affect the tip resolution. For example, the tunneling currentused at the bias voltage of −4 V has been reported as approximately 10nA. The tip is extremely close to the surface at such a bias and currentcombination, which ultimately increases the chance of a tip-samplecrash.

SUMMARY

Disclosed herein is a novel method for the controlled removal ofhydrogen atoms at negative sample bias voltages. Voltage-modulatedfeedback-controlled lithography (VMFCL) de-passivates selected hydrogenatoms at negative sample bias voltages using much lower current andvoltage setpoints compared to previously reported values. The disclosedmethod enables a new instrument configuration wherein the tip-sampleheight is maintained at the normal imaging levels while simultaneouslyperforming lithography. The instrument is greatly improved forlithography mode wherein the chance of a tip-sample crash issignificantly decreased, and lithography precision is significantlyincreased.

Various embodiments of the present invention are disclosed herein. Forexample, in one embodiment, a lithography method for removing an atomfrom a surface is disclosed, based on detection of sharp changes intip-sample relative height in an STM. The lithography method is based onoperating a scanning tunneling microscope (STM), having an STM tip heldnear the surface by a control feedback loop, wherein the STM measures arelative height between the STM tip and the surface. Then a bias voltageis applied between the surface and the STM tip, wherein the DC componentof the bias voltage is negative at the surface referenced to the STMtip. The method further comprises modulating the bias voltage with adither voltage at a dither frequency and dither amplitude wherein thedither frequency is greater than the controller frequency bandwidth andless than the resonance frequency of the STM and measuring a tip-samplecurrent between the STM tip and the surface. The method furthercomprises modifying the tip-sample current for control feedback byremoving signals at the dither frequency and a number of harmonics ofthe dither frequency from the tip-sample current. The dither amplitudeis then increased to effect a desorption of the atom from the surface.

In one set of embodiments, a desorption of an atom from the surface isdetected as a sharp increase in the relative height, and upon detectingthe sharp increase in the relative height, the dither amplitude isdecreased. In another set of embodiments, a desorption of an atom fromthe surface is detected as a sharp increase in the tip-sample current,and upon detecting the sharp increase in the tip-sample current, thedither amplitude is decreased.

In another aspect of the invention, the atom is a hydrogen atom and thesurface is hydrogen-terminated.

In one aspect of the present invention a set of notch filters in thecontrol feedback loop are configured to remove the feedback signals atthe dither frequency and the number of harmonics of the dither frequencyfrom the tip-sample current. In another aspect, the number of harmonicsremoved is preferably at least five.

In other embodiments, the method further comprises the steps ofselecting a desorption position from a set of desorption positions fordesorption of an atom from the surface, moving the STM tip to thedesorption position, increasing the dither amplitude while the STM tipis at the desorption position, comparing the relative height of the STMtip above the surface to a predefined threshold to detect a sharp changein relative height. Further to the method, if the sharp change inrelative height is not detected then the dither amplitude is increasedagain and the comparing step repeated. If the sharp change in relativeheight is detected or if the dither amplitude has reached a maximumwithout any sharp change being detected, then the dither amplitude isdecreased to a value near zero.

In yet other embodiments, the method comprises the steps of selecting adesorption position from a set of desorption positions for desorption ofan atom from the surface, moving the STM tip to the desorption position,increasing the dither amplitude while the STM tip is at the desorptionposition, comparing the tip-sample current of the STM tip above thesurface to a predefined threshold to detect a sharp change in tip-samplecurrent. Further to the method, if the sharp change in tip-samplecurrent is not detected then the dither amplitude is increased again andthe comparing step repeated. If the sharp change in tip-sample isdetected or if the dither amplitude has reached a maximum without anysharp change being detected, then the dither amplitude is decreased to avalue near zero.

According to further embodiments of the present invention, thelithography method may be enhanced to perform imaging functions, bydetermining a measured capacitive current, a measured AC tunnelingcurrent and a measured DC tunneling current from the tip-sample current.The measured capacitive current is detected 90 degrees out of phase fromthe dither voltage and, the measured AC tunneling current is detected inphase with the dither voltage. In some embodiments, the step ofdetermining a measured capacitive current and a measured tunnelingcurrent is performed using a lock-in amplifier. In other embodiments,the step of determining a measured capacitive current and a measuredtunneling current is performed by using a Lyapunov filter. It is alsotaught that STM may be operated to de-passivate an atom from the surfacewhile simultaneously collecting an STM scanned image comprising at leastone of the measured capacitive current, the measured AC tunnelingcurrent or the measured DC tunneling current.

In another embodiment of the present invention, a lithography instrumentfor desorbing atoms from a surface is disclosed using a scanningtunneling microscope. The STM is configured such that the STM tip isheld at a bias voltage with respect to the surface wherein the biasvoltage is negative and, the STM control system is configured to measurea tip-sample current between the STM tip and the surface. The controlsystem is further configured to operate a control feedback loop within acontrol frequency bandwidth which adjusts a relative height between theSTM tip and the surface to maintain the amplitude of the tip-samplecurrent within the control frequency bandwidth. The control system isfurther configured to modulate the bias voltage with a dither voltage ata dither frequency and dither amplitude wherein the dither frequency isgreater than the control frequency bandwidth and less than the lowestresonance frequency of the STM. In another aspect of the control system,the tip-sample current is modified for control feedback by removingsignals at the dither frequency and a number of harmonics of the ditherfrequency from the tip-sample current. The instrument is configured todetect a desorption of the atom from the surface and, upon detecting thedesorption of the atom, decrease the dither amplitude.

In a further embodiment, to detect the desorption of the atom from thesurface, the lithography instrument may be further configured to selecta desorption position for desorption of the atom from the surface, movethe STM tip parallel to the surface to the desorption position, increasethe dither amplitude while the STM tip is at the desorption positionand, compare the tip-sample current to a predefined threshold to detecta sharp change in tip-sample current as the desorption of the atom. Ifthe sharp change in tip-sample current is not detected, then the ditheramplitude is increased and the compare step repeated. If the sharpchange in tip-sample current is detected or if the dither amplitude hasreached a maximum without any sharp change being detected, then thedither amplitude is decreased to a value near zero.

In another embodiment, to detect the desorption of the atom from thesurface, the lithography instrument is configured to select a desorptionposition for desorption of the atom from the surface, move the STM tipparallel to the surface to the desorption position, increase the ditheramplitude while the STM tip is at the desorption position and, comparethe relative height to a predefined threshold to detect a sharp changein relative height as the desorption of the atom. If the sharp change inrelative height is not detected, then increase the dither amplitudeagain and repeat the compare step. If the sharp change in relativeheight is detected or if the dither amplitude has reached a maximumwithout any sharp change being detected, then decrease the ditheramplitude to a value near zero.

In yet another embodiment of the lithography instrument, wherein it maybe used a novel imaging mode, the control system is further configuredto determine a measured capacitive current, a measured AC tunnelingcurrent and a measured DC tunneling current from the tip-sample current.The measured capacitive current is detected 90 degrees out of phase fromthe dither voltage and, the measured AC tunneling current is detected inphase with the dither voltage.

In one aspect, the lithography instrument may comprise a lock-inamplifier, wherein the measured capacitive current and the measuredtunneling current are determined using the lock-in amplifier. In anotheraspect, the lithography instrument may comprise a Lyapunov filter,wherein the measured capacitive current and the measured tunnelingcurrent are determined using the Lyapunov filter.

It is conceived that the lithography instrument may be programmablyconfigured to move the STM tip to one or more desorption positions abovethe surface and desorb one or more atoms from the surface at the one ormore desorption positions. The lithography instrument may be configuredto collect at least one scanned image comprising the measured capacitivecurrent, the measured AC tunneling current and the measured DC tunnelingcurrent. The scanned image may be collected concurrently with desorbingthe one or more atoms from the surface at the one or more desorptionpositions.

In another embodiment of the present invention, a modified scanningtunneling microscope is disclosed, the STM comprising an STM tip at abias voltage with respect to the surface wherein the bias voltage isnegative. The STM includes a control system, connected to a z-actuatorand an x-y scanner, the control system configured to measure atip-sample current between the STM tip and the surface; and furtherconfigured to operate a control feedback loop within a control frequencybandwidth. The control system then adjusts a relative height between theSTM tip and the surface, with the z-actuator, to maintain the amplitudeof the tip-sample current within the control frequency bandwidth. Inanother aspect, the control system is configured to modulate the biasvoltage with a dither voltage at a dither frequency and dither amplitudewherein the dither frequency is greater than the control frequencybandwidth and less than the lowest resonance frequency of the STM. Thecontrol system is further configured to modify the tip-sample currentfor control feedback by removing signals at the dither frequency and anumber of harmonics of the dither frequency from the tip-sample current.The control system is further configured to extract at least one of ameasured capacitive current, a measured AC tunneling current or ameasured DC tunneling current from the tip-sample current, wherein themeasured capacitive current is 90 degrees out of phase from the dithervoltage, and wherein the measured tunneling current is in phase with thedither voltage. The control system is further configured to scan the STMtip approximately parallel to the surface with the x-y scanner to a setof x-y scan positions and, determine at least one scanned image from themeasured capacitive current, the measured AC tunneling current or themeasured DC tunneling current.

In another embodiment, a method is disclosed for obtaining an I-V curvefor a surface using the modified scanning tunneling microscope. The I-Vcurve method includes modifying a scanning tunneling microscope asdescribed in the previous paragraph. Then during operation of themodified scanning tunneling microscope, while the dither voltageamplitude is changing, measuring the AC tunneling current I as afunction of dither voltage amplitude V to form an I-V curve for each x-yposition in the set of x-y scan positions, each x-y positioncorresponding to an image pixel in the scanned image.

In another aspect of the I-V curve method at least one of the biasvoltage DC level, dither voltage amplitude or dither voltage frequencymay be changed while measuring the tip-sample current.

According to the present invention, yet another method for performinglithography is disclosed based on modifying a scanning tunnelingmicroscope as described previously, selecting a desorption position fordesorption of an atom from the surface and moving the STM tip parallelto the surface to the desorption position. While the STM tip is at thedesorption position; increasing the dither amplitude and comparing therelative height to a predefined threshold to detect a sharp change inrelative height as the desorption of the atom. If the sharp change inrelative height is not detected, the dither amplitude is increased againand the compare step repeated. If the sharp change in relative height isdetected or if the dither amplitude has reached a maximum without anysharp change being detected, then the dither amplitude is decrease to avalue near zero.

According to another aspect of the method for performing lithography,instead of detecting sharp changes in relative height of the tip to thesample, the tip-sample current is compared to a predefined threshold todetect a sharp change in the tip-sample current as the desorption of theatom. If the sharp change in tip-sample current is not detected, thedither amplitude is increased again, and the compare step repeated. Ifthe sharp change in tip-sample is detected or if the dither amplitudehas reached a maximum without any sharp change being detected, then thedither amplitude is decrease to a value near zero.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter, which is regarded as the invention, is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The foregoing and other objects, features, andadvantages of the invention are apparent from the following detaileddescription taken in conjunction with the accompanying drawings.

FIG. 1 is a schematic illustration of a scanning tunneling microscope(STM) operating in a constant current imaging mode wherein a sample tobe imaged is negatively biased with respect to the STM tip.

FIG. 2 is a block diagram of an STM Z-axis control system withsimplified tunneling current model wherein C(s), G_(h)(s), and G_(p)(s)refer to controller, high voltage amplifier, and Z axis actuator,respectively and G_(A)(s) refers to preamplifier with the amplificationgain of k in accordance with various embodiments of the presentinvention.

FIG. 3 is a flowchart illustrating methods of hydrogen removal usingvoltage-modulated feedback-controlled lithography (VMFCL) in accordancewith various embodiments of the present invention.

FIG. 4 is a topographical image of a surface after the performance oflithography highlighted in the rectangular area, the tip speed, biasvoltage, and setpoint current were 0.1 nm/sec, −2.5 V, and 1 nA,respectively, the ac voltage amplitude is increased from 0 V to 1.5 Vduring the first half of the path and then remains constant at 1.5 V, insome embodiments according to the present invention.

FIG. 5 is an example graph of ac voltage amplitude and current during ascan where the ac voltage amplitude is shown on the left axis and thecurrent after the notch filters is shown on the right axis and the firstde-passivation, which corresponds to the first jump in the current,occurs after about 56.7 seconds in some embodiments according to thepresent invention.

FIGS. 6A-B are topographical images for a surface prior tode-passivation and after de-passivation, respectively, showing removalof hydrogen atoms from the hydrogen terminated silicon surface where thebias voltage and the current setpoints are −2.5 V and 1 nA, respectivelyin some embodiments according to the present invention.

FIG. 7 is a graph showing Z positioner displacement as a function oftime where each of the horizontal numbered arrows indicates thepositioning of the tip above a specific dimer on the surface anddesorption events are identified by the highlighted step jumps shownwith vertical arrows in some embodiments according to the presentinvention.

FIG. 8 is a graph of sample bias voltage and filtered current as afunction of time where the left-hand axis is the bias voltage (shown asthe triangular waveforms that include the modulated voltage signal) andthe right-hand axis is the current (shown as the step waveforms) andhydrogen removal is indicated as a step change in current and themodulation bias voltage is reduced to zero and the tip is moved to thenext coordinate once a hydrogen removal event is detected in someembodiments according to the present invention.

FIG. 9 is a graph of measured current before being filtered by the notchfilters, where the current includes capacitive and tunneling componentsand the inset shows a detailed view of a desorption event as evidencedby the current in some embodiments according to the present invention.

FIG. 10 is a block diagram of a computing system that can be used toperform processor-executable instructions represented by non-transitoryprocessor-readable media to carry out the operations shown in, forexample, FIGS. 2-9 and described in the associated materials of thisdisclosure in some embodiments according to the invention.

FIG. 11A is a graph of an I-V curve showing a time-varying voltagesignal including a dither voltage applied to a dc bias voltage togenerate a time varying tip-sample current signal in some embodimentsaccording to the invention.

FIG. 11B is a block diagram of an STM system 100 of FIG. 2 having thetime-varying voltage signal of FIG. 11A for topographical imaging andincluding a lock-in amplifier used to generate an ac tunneling currentgenerated at the X output be removing a capacitive current componentfrom the time varying tip-sample current signal in some embodimentsaccording to the invention.

FIG. 12 is a block diagram of an STM system including a control feedbackloop that includes a lock-in amplifier that receives a time varyingtip-sample current signal to generate an ac tunneling current byremoving a capacitive current component from the time varying tip-samplecurrent signal and further includes at least one notch filter togenerate a dc current from the time varying tip-sample current signal byremoving the frequency components of the time varying tip-sample currentsignal at the dither voltage signal frequency in some embodimentsaccording to the invention.

FIGS. 13A-13C show topographic, dc current, and ac current images,respectively, generated simultaneously are a topographical image, usingthe system shown in FIG. 12 in some embodiments according to theinvention.

FIG. 14 a time-varying voltage signal applied to the system of FIG. 11Bto generate the time varying tip-sample current signal shown, which isprocessed by the lock-in amplifier to isolate the ac tunneling currentby removing the capacitive current component in the time varyingtip-sample current signal in some embodiments according to theinvention.

FIG. 15 is an I-V curve for a location on the sample processed by thesystem shown in FIG. 11B in some embodiments according to the invention.

DETAILED DESCRIPTION OF EMBODIMENTS ACCORDING TO THE INVENTION

Exemplary embodiments of the present disclosure are described in detailwith reference to the accompanying drawings. The disclosure may,however, be exemplified in many different forms and should not beconstrued as being limited to the specific exemplary embodiments setforth herein. Rather, these exemplary embodiments are provided so thatthis disclosure will be thorough and complete, and will fully convey thescope of the disclosure to those skilled in the art.

As described herein in detail herein, in some embodiments according tothe invention, a method of controlling removal of hydrogen atoms from ahydrogen-terminated silicon surface at negative sample bias voltages canbe performed wherein voltage-modulated feedback-controlled lithography(VMFCL) de-passivates selected hydrogen atoms at negative sample biasvoltages using much lower current and bias voltage setpoints compared topreviously reported values.

Further, a new instrument configuration is shown wherein the tip-sampleheight is maintained at typical imaging levels while simultaneouslyperforming lithography. In lithography mode of operation, the instrumentis remarkably improved over prior art methods such that the chance of atip-sample crash can be significantly decreased, and lithographyprecision may be significantly increased compared to other methods.

FIG. 1 is a schematic illustration of a scanning tunneling microscope(STM) 100 operating in a constant current imaging mode wherein a sampleto be imaged is negatively biased with respect to the STM tip. Accordingto FIG. 1, the STM 100 operates in a constant current imaging mode andincludes a Z-axis positioner 105, connected to an STM tip 110, and anX-Y scan control 107. Operation of the STM 100 is controlled by acontrol system that includes a Z-controller 102, a pre-amp 106 and othersignal conditioning components 104. A model for the control system isdescribed further in relation to FIG. 2. During operation of the STM100, a bias voltage 103 is applied between an STM tip 110 and a sample120. As the STM tip 110 moves over atoms on a sample 120, tunnelingcurrent i_(t) is measured, where it changes responsive to variation inthe height and atomic structure of the surface as the XY plane of thesample 120 is scanned by X-Y scan control 107. The measured tunnelingcurrent i_(t) is provided as the feedback input signal for the controlsystem, which commands the Z-axis positioner 105 to adjust a tip-sampleheight 101 (δ) to keep the tunneling current it at a predefined setpointvalue i_(d). The control system output is then translated to thevertical tip position h of the Z-axis positioner 105 and is plottedagainst the tip's XY position to construct a topographical image of thesurface of the sample 120. In some embodiments according to theinvention, the z-axis positioner is a piezoelectric element, which canbe a tube-shaped structure.

FIG. 2 is a block diagram of an STM Z-axis control system 200 for theSTM 100 of FIG. 1, with simplified tunneling current model wherein C(s),G_(h)(s), and G_(p)(s) refer to controller, high voltage amplifier, andZ axis actuator, respectively and G_(A)(s) refers to preamplifier withthe amplification gain of k in accordance with various embodiments ofthe present invention. According to FIG. 2, the control system 200includes a z-controller 202, modeled as C(s), connected through a highvoltage amplifier 204, modeled as Gh(s), to a Z-axis actuator, modeledas G_(p)(s), resulting in a tip-sample current i (210), modeled byphysical model 208 as described herein. A current preamplifier 212,modeled as G_(A)(s) with the amplification gain of k, amplifies thetip-sample current i to obtain measured (amplified) current ki.

According to FIG. 2, a bias voltage 220 is combined with a dithervoltage 221 to create the voltage that affects the tip-sample current i.In some embodiments according to the invention, the bias voltage can bea negative dc voltage (referenced to the sample) and the dither voltagecan be an ac voltage signal having a frequency Ω so that the combinedsignal is an ramped amplitude modulated signal having the frequency Ω.Measured (amplified) current, ki, is filtered by a set of notch filters214 resulting in the measured (amplified) tunneling current ki_(t), forwhich its associated natural logarithm, ln(ki_(t)) 225 is determined.The control system is configured to minimize the difference between thenatural logarithm of a setpoint tunneling current, ln(ki_(d)) 201 andln(ki_(t)) 225 at comparator 230. In some embodiments, a Lypanov filter215 is included and its function is described in greater detailhereinbelow. It will be understood that the term “sample bias voltage”is defined as the sample potential measured with respect to the STM tippotential, (V_(sample)−V_(tip)) in some embodiments according to theinvention.

For the physical model 208, the approximated expression for thetunneling current implies the dependence of electrical current on thetip-sample voltage difference in addition to its exponential dependenceon the tip-sample gap. This approximated model can be expressed as:

$\begin{matrix}{i \approx {\frac{4\;\pi\; e}{\hslash}e^{{- 1.025}\sqrt{\phi}\delta}{\rho_{t}(0)}{\int_{- {ev}}^{0}{{\rho_{s}(ɛ)}d\; ɛ}}}} & (1)\end{matrix}$

where e is the electron charge, h is reduced Planck's constant, ϕ is thebarrier height in electron volt, δ is approximately the gap between tipand sample in angstrom, ρ_(s) and ρ_(t) are density of states (DOS) ofsample and tip respectively, and v is the tip-sample voltage difference.Eq. 1 can be written as:

i≈f(v)e ^(−1.025√{square root over (ϕδ)})  (2)

where f(v) is:

$\begin{matrix}{{f(v)} = {\frac{4\;\pi\; e}{\hslash}{\rho_{t}(0)}{\int_{- {ev}}^{0}{{\rho_{s}(ɛ)}d\; ɛ}}}} & (3)\end{matrix}$

As the tunneling current can have a small value, typically a fewnano-amperes, a current preamplifier with the gain of k can be used toamplify the current and convert it to more measurable voltage.

To linearize the model, the natural logarithm of current is taken afterit is amplified by the preamplifier. By taking the natural logarithm ofcurrent, we gain access to a variable that changes linearly with thetip-sample height. Thus, by regulating this variable we may regulate thetip-sample height, assuming that the remaining parameters are relativelyconstant.

In some embodiments according to the invention, a new approach isdisclosed for performing Hydrogen de-passivation (HD) lithography basedon the use of previously unused frequency bandwidth of conventional STMsystems. During normal STM operation, only low frequency currentmeasurements play a role in the construction of the surface topographyimage. Considering that the normal closed-loop bandwidth of STM istypically only a few hundred hertz, a large portion of the frequencyband remains intact, which can be simultaneously used for other purposeswithout disturbing the normal operation of STM. In this new approach, HDlithography is performed with the voltage and current setpointparameters conventionally used during the imaging mode, and thetip-sample gap is maintained at values normally used for imaging.

To perform HD lithography with negative sample bias voltage and atnormal tip-sample height, a dither voltage, preferably a sinusoidalvoltage with the frequency of Ω, is added to the negative bias voltage.The effect of the dither voltage can be measured as a current with thefrequency of Ω and its harmonics, as expected from Eq. 1. To minimallydisturb the tip-sample height, the modulation signal of the dithervoltage is selected such that the dither frequency is beyond thecontroller bandwidth. In addition, to avoid excitation of the scannerresonant dynamics, the dither frequency is selected to be lower than theresonance frequency of the scanner. To further ensure that thez-controller does not respond to the dither frequency, a set of notchfilters are incorporated in the feedback loop attenuating the current atthe frequency of Ω and its first few harmonics. Accordingly, in someembodiments according to the invention, the bias voltage, andconsequently the tip-sample current, can be manipulated withoutsubstantially affecting the feedback controller. This ensures that thetip-sample height remains unchanged from a typical STM scan.

In some embodiments according to the invention, the dither voltage canbe a waveform other than a simple sinusoidal waveform. It will beunderstood that in such embodiments, the frequency of the waveform usedshould be outside the frequency bandwidth of conventional STM systems.Further in such embodiments, the notch filters are configured toattenuate frequency components of the current signal ki with thefrequency of Ω and its harmonics, as expected from Eq. 1 sufficiently soas to substantially leave the tip-sample height unaffected by operationof the feedback controller.

Upon de-passivation of a hydrogen atom, a jump in the tunneling currentis observed which results from alterations in the local electronicstructure of the surface. Electrons tunnel out of the silicon danglingbonds instead of the silicon-hydrogen bonds after a hydrogen atom leavesthe surface resulting in a step change in the tunneling current. Thecontroller then adjusts the relative tip-sample distance (height) tomaintain the setpoint value of tunneling current. In normal imagingmode, then, a de-passivation event is detectable as a step jump in theheight to which the z-positioner of the STM tip would normally actuatein closed loop operation.

Accordingly, as appreciated by the present inventors, the individualdesorption events can be detected by monitoring for these step changesin the tunneling current (or in the closed loop height) so as to providea removal routine for single hydrogen dimers from the silicon surface,which may be referred to herein as Voltage-Modulated Feedback-ControlledLithography (VMFCL). In some embodiments, the removal routine may beautomated. Moreover, this method can decrease the likelihood of atip-sample crash and increase the lithography precision.

FIG. 3 is a flowchart illustrating methods of hydrogen removal usingvoltage-modulated feedback-controlled lithography (VMFCL) in accordancewith various embodiments of the present invention. According to FIG. 3,an automated hydrogen removal process 300 can use a high frequencydither voltage on a negative DC bias voltage while operating the STM inclosed loop to control tunneling current. As shown in FIG. 3, at step302, the surface of the sample is scanned, and the desired X-Y positionis selected, from a set of X-Y positions, for hydrogen removal (step304). At step 306, the tip is moved to the first X-Y position and, atstep 308, a dither voltage of frequency Ω is added to a negative DC biasvoltage of the sample and the amplitude of the combined signal is rampedup gradually to a final value, while relative height δ is monitored(step 310). The relative height is monitored to determine if a relativeheight threshold is crossed. Relative height threshold (δ_(th)) isdefined as a step change in the closed loop tip-sample height(z-actuator position) above which hydrogen is considered to have beenremoved from the surface. Relative height threshold δ_(th) should becarefully evaluated and selected because using a large threshold mayincrease the possibility of a missed desorption event whereas using athreshold that is too low may lead to false detection of a desorptionevent. See for example, FIG. 7 where a positive step change of about0.05 nm in relative height, Z(nm), in some embodiments according to theinvention, may be typical for a de-passivation event and δ_(th) selectedin the range of about 0.02 to about 0.04 would be appropriate.

If, at step 312, a step change in the relative height above δ_(th) isdetected (desorption succeeded 316) and the dither voltage is reduced tozero (step 320) and a determination is made as to whether any otherhydrogen atoms are to be removed (step 324) so that the tip can be movedto the next X-Y position (step 306). If, however, at step 312, a stepchange in the relative height above δ_(th) is not detected, adetermination is made as to whether the dither voltage amplitude hasreached a maximum value (step 314). If, at step 314, the dither voltagehas not yet ramped to the maximum value, then the dither voltagecontinues to ramp and the relative height is further monitored (step310). If, at step 314, the dither voltage has been ramped to the maximumvalue but no step change in the relative height above δ_(th) has beendetected then desorption failed (step 315), the dither voltage isreduced to zero (step 320). From the surface scan in step 302, the nextX-Y position for hydrogen desorption is selected (step 324) and theprocess repeats at step 306. If there are no more positions for hydrogenremoval then, optionally, an STM image may be scanned and recorded atstep 322.

As further shown in FIG. 3, in some embodiments according to theinvention, the tip-sample current be monitored (step 311) to determineif a current threshold is crossed. Current threshold (i_(th)) can bedefined as a step change in the tip-sample current above which hydrogenis considered to have been removed from the surface. Tip-sample currentthreshold should be carefully evaluated and selected because using alarge threshold increases the possibility to miss a desorption event andusing a small threshold may lead to false detection. See for exampleFIG. 5 and FIG. 8, where an appropriate threshold current may be about1.5 nA or about 0.5 nA above the mean current of about 1 nA (see alsoFIG. 9). In this embodiment, if, at step 312, a step change in thetip-sample current above i_(th) is detected (desorption succeeded step316) or the dither voltage amplitude has reached a maximum value (step314, desorption failed step 315), the dither voltage is ramped down tozero (step 320). If, at step 314, the dither voltage has not been rampedto the maximum value, then the dither voltage ramp continues, and thetip-sample current is further monitored (step 311).

It will be further understood that, in some embodiments according to theinvention, the process shown in FIG. 3 can be carried out byestablishing a modulation voltage level that is sufficient to cause adesorption of a particular atom that terminates the surface of thesample. In some embodiments, the modulation voltage level can bedetermined either deterministically or empirically. Once determined, thelithography of FIG. 3 may be performed without a need to determinewhether desorption has occurred before moving to the next location.Further, in some embodiments, the process may be performed by rampingthe modulation voltage level directly to the level determined to besufficient for desorption. In some embodiments according to theinvention, the process may be performed without ramping the modulationvoltage level, but rather by setting the modulation voltage leveldirectly to the level determined to be sufficient for desorption.

The embodiments of the present VMFCL method should not be construed aslimited to the de-passivation of hydrogen atoms from silicon surfaces.For example, in some embodiments, VMFCL may be used to de-passivatechlorine-terminated silicon surfaces, surfaces passivated with adifferent species of atoms, hydrogen-terminated diamond or germaniumsurfaces. Other passivated surfaces may also be processed using VMFCL insome embodiments according to the invention.

In still further embodiments according to the present invention, asappreciated by the present inventors, a capacitive current can begenerated by adding the high-frequency dither voltage to the biasvoltage. The generated capacitive current can be added to the tunnelingcurrent to form the tip-sample current i (same as i from FIG. 2). Withthe dither voltage added to the bias voltage, the tip-sample current ihas an AC component and a DC component. By using a lock-in amplifier ora Lyapunov filter, the AC components (the capacitive current (AC bynature) and the AC tunneling current) and the DC components (the DCtunneling current) are separated and measured individually. Separationof these two types of current enables extraction of useful informationfrom each of them. For example, the capacitive current can be used toproduce capacitive images or it could be used to enable fastpre-approach of the STM tip. The AC tunneling current can be used toobtain an I-V map concurrently with the imaging. Furthermore, thecapacitive current may be used to detect buried structures beneath thesurface. Moreover, either the AC tunnel current, or the capacitivecurrent, or a combination of both can be used for feedback control as analternative to the low frequency tunnel current.

The total sample bias voltage can be written as:

v=v _(bias) +v _(d) sin(Ωt)  (5)

where v_(bias) is the DC sample bias voltage and v_(d) is the amplitudeof dither voltage. The capacitive current can be obtained as:

$\begin{matrix}{i_{cap} = {{C\frac{dv}{dt}} = {{Cv}_{d}\Omega\;{\cos\left( {\Omega\; t} \right)}}}} & (6)\end{matrix}$

where C is the total capacitance including the tip-sample capacitanceand stray capacitances. While the tip-sample capacitance varies withtip-sample height, the stray capacitance typically has a constant value.The measured current is the sum of both the tunneling current (i_(tun))and capacitive current (i_(cap)). Since tunneling current is in-phasewith the dither voltage and the capacitive current is 90 degrees out ofphase with the dither voltage, the tip-sample current can be expressedas:

$\begin{matrix}\begin{matrix}{i = {i_{tun} + i_{cap}}} \\{= {a_{0} + {\sum\limits_{n = 1}^{\infty}{a_{n}{\sin\left( {n\;\Omega\; t} \right)}}} + {{Cv}_{d}\Omega\;{\cos\left( {\Omega\; t} \right)}}}} \\{= {a_{0} + {A\;{\sin\left( {{\Omega\; t} + \theta} \right)}} + {\sum\limits_{n = 2}^{\infty}{a_{n}{\sin\left( {n\;\Omega\; t} \right)}}}}}\end{matrix} & (7) \\{where} & \; \\{A = \sqrt{a_{1}^{2} + \left( {{Cv}_{d}\Omega} \right)^{2}}} & (8) \\{\theta = {{arc}\;{\tan\left( {{Cv}_{d}{\Omega/a_{1}}} \right)}}} & (9)\end{matrix}$

For capacitive imaging with an STM, the tip-sample current is firstpassed through a preamplifier with the known amplification gain of k andthen passed through the Lyapunov filter 215, as shown in FIG. 2.Assuming that the modulation frequency of the dither voltage is wellbelow the bandwidth of the preamplifier, kA and θ can be obtained by theLyapunov filter, from which α₁ and C are calculated as:

$\begin{matrix}{a_{1} = {A\;{\cos(\theta)}}} & (10) \\{C = \frac{A\;{\sin(\theta)}}{v_{d}\Omega}} & (11)\end{matrix}$

and then the tunneling current can be extracted as:

i _(tun) =i−i _(cap) =i−A sin(θ)cos(Ωt)  (12)

Similarly, a lock-in amplifier may be used to extract an AC in-phasecomponent of measured current (AC tunneling current), AC out-of-phasecomponent (capacitive current) and a DC component (normal low-frequencyDC tunneling current).

By this method, a capacitive current image, AC tunneling current imageand a normal DC tunneling image can all be extracted from an STM scanand used for analysis of the sample surface.

In another embodiment of the present invention, known as I-V mapping,the AC tunneling current is recorded as a function of dither voltage atany given X-Y position during the STM scan.

In another embodiment, the STM scan may be stopped at any given X-Yposition and taken out of closed-loop operation wherein the z-controlleris turned off. With the tip-sample distance held to a constant, the biasvoltage (DC level) is changed. While the bias voltage is changed, thetip-sample current is recorded as a function of bias voltage. In otherembodiments, at least one of the bias voltage DC level, dither voltageamplitude or dither voltage frequency is changed while recording thetip-sample current to investigate the physical properties of the samplesurface.

Experiments were performed at the room temperature with an UHV STMhaving the base pressure as low as 10⁻¹¹ Torr. A 20-bit digital signalprocessor (DSP) with the sampling frequency of 100 kHz, commerciallyknown as ZyVector, was used for control purposes. The scanner resonancefrequency is located approximately at 2750 Hz. To prepare theH-terminated Si(100) wafer, a 4×8 mm² piece of boron-doped wafer wascut, and cleaned ex-situ using a standard Piranha etch to remove surfacecontaminants. The sample was then mounted into the sample holder andplaced into the vacuum system. After the introduction to UHV, the samplewas degassed at 650° C. for 8 hours and then was flashed to 1250° C. for30 s to remove the surface oxide film and any surface carboncontamination. This flashing was repeated 3 times, and then the surfacewas cooled to 350° C. To saturate the surface with H atoms, the cleanSi(100) surface was exposed to a flux of atomic H from a 1300° C.tungsten filament for 4 minutes, while it was maintained at 350° C. Thesample was then cooled to room temperature and transferred into the STMchamber.

To examine the effect of modulation voltage amplitude on hydrogende-passivation, the STM tip was moved along a dimer row with the speedof 0.1 nm/sec. The sample voltage was −2.5 V plus the modulated voltage.The controller was in the loop and adjusted the tip-sample height tomaintain a 1 nA tunneling current. The closed-loop bandwidth of the STMwas approximately 200 Hz. The modulation frequency was selected as 1 kHz(i.e., greater than the closed-loop bandwidth and lower than the firstresonant frequency of the scanner). Five notch filters with notchfrequencies of 1 kHz, 2 kHz, 3 kHz, 4 kHz, and 5 kHz were incorporatedinto the feedback loop to attenuate the effect of AC voltage on themeasured current. Consequently, the controller output should not beaffected by the modulation signal nor its harmonics. This ensures thefeedback loop operates under imaging conditions. The amplitude ofmodulation was increased from 0 V to 1.5 V during the first 75 secondsand then kept constant at 1.5 V. Therefore, considering the −2.5 V biasvoltage, the actual sample voltage varied from −4 V to −1 V when themodulation voltage ramps to its final value. FIG. 4 shows an image ofthe resulting topography after the lithography was performed. The tiptrajectory along the dimer row is shown with in the highlighted area.The first de-passivation occurred when the tip has moved about 5.7 nmalong the dimer row. At this point, the amplitude of modulation voltagehad reached 1.15 V, which means that the sample voltage was fluctuatingbetween −3.65 to −1.35 volts. FIG. 5 shows the modulation voltageamplitude 510 and the current 515 after filtering by the notch filters215 as the tip moves along the dimer row. Frequent subsequentde-passivations occurred along the tip's path after the firstde-passivation, which is evident in FIGS. 4 and 5, showing that themodulation voltage amplitude has reached the necessary threshold neededfor the de-passivation.

FIGS. 6A and 6B show before and after de-passivation using the VMFCLmethod described herein in some embodiments according to the presentinvention. FIG. 6B shows single hydrogens removal from thehydrogen-terminated silicon where the sample bias voltage was set to−2.5 V and the feedback loop maintains the DC tunneling current at 1 nA.Once the tip reaches a desired position, a 1 kHz modulation voltage wasadded to the setpoint bias voltage whose amplitude ramps up from zero to1.5 V over 10 seconds. As de-passivation was detected or the modulationamplitude reached its maximum value, the modulation amplitude rampeddown to zero in 0.1 seconds. The height signal was averaged for 20 msbefore being compared with the height threshold (δth), which increasedthe accuracy of jump detection by reducing the noise of the heightsignal. The threshold for a jump to be considered a successfuldesorption event was set to 0.3 Ångstrom. As shown in FIG. 6, each ofthe targeted hydrogen atoms were removed from the surface.

The displacement of the Z positioner is also shown in FIG. 7 in whichde-passivation events are shown at each arrow 705, wherein the currentincreased as soon as a hydrogen atom was desorbed from the surface andthe controller moved the tip further away from the sample to maintainthe setpoint current. This step in height, detected as a step jump indisplacement of the Z-positioner while in closed loop feedback control,can be used to detect the desorption event.

The current after application of the notch filters 215 and the samplebias voltage are shown in FIG. 8. According to FIG. 8, allde-passivation events were successfully identified except for the A,which is indicated by the continued ramp 805 of the dither voltage addedto the sample bias voltage despite the current step 815. In all othercases, the corresponding ramp-up of the dither voltage is stopped afterthe current step, and returned to zero. In particular, the amplitude ofdither voltage ramps down to zero as soon as the hydrogen atom isdesorbed from the surface and the tip is moved to the next coordinate,where another step appears in the current and height. This jump is notrelated to hydrogen de-passivation. As shown in FIG. 8, the hydrogenatom desorbs from the surface when the amplitude of the dither voltagehas a value in the range of 1 to 1.5 volts.

The measured tip-sample current before the notch filters is also shownin FIG. 9. As described herein, adding modulation to the sample biasvoltage induces oscillations with the same frequency in the tip-samplecurrent, which are not visible in the figure because the respectiveperiod is relatively short given the scale of X-axis. The inset of FIG.9 is a magnified view showing a de-passivation event. Currentoscillations due to the application of a modulated voltage and thecurrent jump resulted from hydrogen atom removal are clearly visible inthe inset. The measured tip-sample current includes a high frequencycapacitive current, a DC tunneling current, and an AC tunneling current,as described herein.

As appreciate by the present inventors, in some embodiments according tothe present invention, by adding a high-frequency dither voltage to theDC setpoint (e.g., negative dc bias voltage), a new method for STM-basedde-passivation lithography can be provided at room temperature. Thismethod can be implemented on most conventional scanning tunnelingmicroscope systems with a small modification to, for example, the STMcontrol software. As described herein, lithography was performed onH-terminated Si at a negative sample bias voltage while maintaining astandard tip-sample distance used for imaging conditions. This canpotentially increase the tip's lifetime.

As further described herein, in some embodiments according to thepresent invention, an automated process is described to extract singlehydrogen atoms from the Si surface. The lithography precision andthroughput were improved by continuously monitoring the tip-sampledistance and stopping the process immediately after a de-passivation wasdetected. In some embodiments according to the present invention, thisprocess was used to successfully create dangling bond structures byselectively removing H atoms at predefined locations. Precise removal ofhydrogen atoms may enable fabrication of devices with atomically precisefeatures, e.g. creation of identical qubits for quantum computation. Thethroughput of this method may also be improved by an implementation ofparallel STMs according to embodiments of the present invention, therebybringing the next-generation electronics into existence. The method mayalso be used to perform lithography on chlorine-terminated siliconsurfaces, hydrogen-terminated diamond of germanium or othersemiconductors, or other surfaces passivated with a different species ofatoms.

FIG. 10 is a block diagram of a computing system 400 that can be used toperform processor-executable instructions represented by non-transitoryprocessor-readable media to carry out the operations shown in, forexample, FIGS. 2-9 and described in the associated materials of thisdisclosure in some embodiments according to the invention. An aspect ofan embodiment of the present invention includes, but not limitedthereto, a system, method, and computer readable medium that providesfor controlling an STM to perform lithography and/or imaging using a dcbias voltage modulated with a dithering signal as described herein. Inparticular, in some embodiments according to the invention, the system400 can be operatively coupled to the STM 100 so that, for example, thedither voltage signal can be generated and combined with the dc biasvoltage for application between the tip and the sample. Further thesystem 400 can operate to receive the time varying current signal andoperate thereon to extract the current components used for control ofthe piezo tube 105, the z controller 102, and the X-Y scan control 107.Still further the system 400 can perform the filtering (notch andLyapunov) used to insulate the STM control system from adverse effectsof the frequency components of the time varying current signal generatedby the dither voltage signal (including harmonics). Accordingly, thestructure illustrated in FIG. 10 can be used to perform processorexecutable instructions to carry out the operations described herein.

Examples of system 400 can include logic, one or more components,circuits (e.g., modules), or mechanisms. Circuits are tangible entitiesconfigured to perform certain operations. In an example, circuits can bearranged (e.g., internally or with respect to external entities such asother circuits) in a specified manner. In an example, one or morecomputer systems (e.g., a standalone, client or server computer system)or one or more hardware processors (processors) can be configured bysoftware (e.g., instructions, an application portion, or an application)as a circuit that operates to perform certain operations as describedherein. In an example, the software can reside (1) on a non-transitorymachine readable medium or (2) in a transmission signal. In an example,the software, when executed by the underlying hardware of the circuit,causes the circuit to perform the certain operations.

In an example, a circuit can be implemented mechanically orelectronically. For example, a circuit can comprise dedicated circuitryor logic that is specifically configured to perform one or moretechniques such as discussed above, such as including a special-purposeprocessor, a field programmable gate array (FPGA) or anapplication-specific integrated circuit (ASIC). In an example, a circuitcan comprise programmable logic (e.g., circuitry, as encompassed withina general-purpose processor or other programmable processor) that can betemporarily configured (e.g., by software) to perform the certainoperations. It will be appreciated that the decision to implement acircuit mechanically (e.g., in dedicated and permanently configuredcircuitry), or in temporarily configured circuitry (e.g., configured bysoftware) can be driven by cost and time considerations.

Accordingly, the term “circuit” is understood to encompass a tangibleentity, be that an entity that is physically constructed, permanentlyconfigured (e.g., hardwired), or temporarily (e.g., transitorily)configured (e.g., programmed) to operate in a specified manner or toperform specified operations. In an example, given a plurality oftemporarily configured circuits, each of the circuits need not beconfigured or instantiated at any one instance in time. For example,where the circuits comprise a general-purpose processor configured viasoftware, the general-purpose processor can be configured as respectivedifferent circuits at different times. Software can accordinglyconfigure a processor, for example, to constitute a particular circuitat one instance of time and to constitute a different circuit at adifferent instance of time.

In an example, circuits can provide information to, and receiveinformation from, other circuits. In this example, the circuits can beregarded as being communicatively coupled to one or more other circuits.Where multiple of such circuits exist contemporaneously, communicationscan be achieved through signal transmission (e.g., over appropriatecircuits and buses) that connect the circuits. In embodiments in whichmultiple circuits are configured or instantiated at different times,communications between such circuits can be achieved, for example,through the storage and retrieval of information in memory structures towhich the multiple circuits have access. For example, one circuit canperform an operation and store the output of that operation in a memorydevice to which it is communicatively coupled. A further circuit canthen, at a later time, access the memory device to retrieve and processthe stored output. In an example, circuits can be configured to initiateor receive communications with input or output devices and can operateon a resource (e.g., a collection of information).

The various operations of method examples described herein can beperformed, at least partially, by one or more processors that aretemporarily configured (e.g., by software) or permanently configured toperform the relevant operations. Whether temporarily or permanentlyconfigured, such processors can constitute processor-implementedcircuits that operate to perform one or more operations or functions. Inan example, the circuits referred to herein can compriseprocessor-implemented circuits.

Similarly, the methods described herein can be at least partiallyprocessor-implemented. For example, at least some of the operations of amethod can be performed by one or processors or processor-implementedcircuits. The performance of certain of the operations can bedistributed among the one or more processors, not only residing within asingle machine, but deployed across a number of machines. In an example,the processor or processors can be located in a single location (e.g.,within a home environment, an office environment or as a server farm),while in other examples the processors can be distributed across anumber of locations.

Example embodiments (e.g., apparatus, systems, or methods) can beimplemented in digital electronic circuitry, in computer hardware, infirmware, in software, or in any combination thereof. Exampleembodiments can be implemented using a computer program product (e.g., acomputer program, tangibly embodied in an information carrier or in amachine readable medium, for execution by, or to control the operationof, data processing apparatus such as a programmable processor, acomputer, or multiple computers).

A computer program can be written in any form of programming language,including compiled or interpreted languages, and it can be deployed inany form, including as a stand-alone program or as a software module,subroutine, or other unit suitable for use in a computing environment. Acomputer program can be deployed to be executed on one computer or onmultiple computers at one site or distributed across multiple sites andinterconnected by a communication network.

In an example, operations can be performed by one or more programmableprocessors executing a computer program to perform functions byoperating on input data and generating output. Examples of methodoperations can also be performed by, and example apparatus can beimplemented as, special purpose logic circuitry (e.g., a fieldprogrammable gate array (FPGA) or an application-specific integratedcircuit (ASIC)).

The computing system can include clients and servers. A client andserver are generally remote from each other and generally interactthrough a communication network. The relationship of client and serverarises by virtue of computer programs running on the respectivecomputers and having a client-server relationship to each other. Inembodiments deploying a programmable computing system, it will beappreciated that both hardware and software architectures requireconsideration. Specifically, it will be appreciated that the choice ofwhether to implement certain functionality in permanently configuredhardware (e.g., an ASIC), in temporarily configured hardware (e.g., acombination of software and a programmable processor), or a combinationof permanently and temporarily configured hardware can be a designchoice. Below are set out hardware (e.g., machine 400) and softwarearchitectures that can be deployed in example embodiments.

In a networked deployment, the machine 400 can operate in the capacityof either a server or a client machine in server-client networkenvironments. In an example, machine 400 can act as a peer machine inpeer-to-peer (or other distributed) network environments. The machine400 can be a personal computer (PC), a tablet PC, a set-top box (STB), aPersonal Digital Assistant (PDA), a mobile telephone, a web appliance, anetwork router, switch or bridge, or any machine capable of executinginstructions (sequential or otherwise) specifying actions to be taken(e.g., performed) by the machine 400. Further, while only a singlemachine 400 is illustrated, the term “machine” shall also be taken toinclude any collection of machines that individually or jointly executea set (or multiple sets) of instructions to perform any one or more ofthe methodologies discussed herein.

Example machine (e.g., computer system) 400 can include a processor 402(e.g., a central processing unit (CPU), a graphics processing unit (GPU)or both), a main memory 404 and a static memory 406, some or all ofwhich can communicate with each other via a bus 408. The machine 400 canfurther include a display unit 410, an alphanumeric input device 412(e.g., a keyboard), and a user interface (UI) navigation device 411(e.g., a mouse). In an example, the display unit 810, input device 417and UI navigation device 414 can be a touch screen display. The machine400 can additionally include a storage device (e.g., drive unit) 416, asignal generation device 418 (e.g., a speaker), a network interfacedevice 420, and one or more sensors 421, such as a global positioningsystem (GPS) sensor, compass, accelerometer, or other sensor.

The storage device 416 can include a machine readable medium 422 onwhich is stored one or more sets of data structures or instructions 424(e.g., software) embodying or utilized by any one or more of themethodologies or functions described herein. The instructions 424 canalso reside, completely or at least partially, within the main memory404, within static memory 406, or within the processor 402 duringexecution thereof by the machine 400. In an example, one or anycombination of the processor 402, the main memory 404, the static memory406, or the storage device 416 can constitute machine readable media.

While the machine readable medium 422 is illustrated as a single medium,the term “machine readable medium” can include a single medium ormultiple media (e.g., a centralized or distributed database, and/orassociated caches and servers) that configured to store the one or moreinstructions 424. The term “machine readable medium” can also be takento include any tangible medium that is capable of storing, encoding, orcarrying instructions for execution by the machine and that cause themachine to perform any one or more of the methodologies of the presentdisclosure or that is capable of storing, encoding or carrying datastructures utilized by or associated with such instructions. The term“machine readable medium” can accordingly be taken to include, but notbe limited to, solid-state memories, and optical and magnetic media.Specific examples of machine readable media can include non-volatilememory, including, by way of example, semiconductor memory devices(e.g., Electrically Programmable Read-Only Memory (EPROM), ElectricallyErasable Programmable Read-Only Memory (EEPROM)) and flash memorydevices; magnetic disks such as internal hard disks and removable disks;magneto-optical disks; and CD-ROM and DVD-ROM disks.

The instructions 424 can further be transmitted or received over acommunications network 426 using a transmission medium via the networkinterface device 420 utilizing any one of a number of transfer protocols(e.g., frame relay, IP, TCP, UDP, HTTP, etc.). Example communicationnetworks can include a local area network (LAN), a wide area network(WAN), a packet data network (e.g., the Internet), mobile telephonenetworks (e.g., cellular networks), Plain Old Telephone (POTS) networks,and wireless data networks (e.g., IEEE 802.11 standards family known asWi-Fi®, IEEE 802.16 standards family known as WiMax®), peer-to-peer(P2P) networks, among others. The term “transmission medium” shall betaken to include any intangible medium that is capable of storing,encoding or carrying instructions for execution by the machine, andincludes digital or analog communications signals or other intangiblemedium to facilitate communication of such software.

FIG. 11A is a graph of an I-V curve showing a time-varying voltagesignal including a dither voltage applied to a dc bias voltage togenerate a time varying tip-sample current signal in some embodimentsaccording to the invention. FIG. 11B is a block diagram of an STM system100 of FIG. 2 having the time-varying voltage signal of FIG. 11A fortopographical imaging and including a lock-in amplifier used to generatean ac tunneling current generated at the X output be removing acapacitive current component from the time varying tip-sample currentsignal in some embodiments according to the invention.

As appreciated by the present inventors, the dither voltage can have anamplitude that is sufficient to generate images with relatively highsignal to noise ratio but without significantly adversely the feedbackcontrol loop for the STM. In particular, the notch filter can remove thefrequency components of the dither voltage so that the STM system is notaffected by the dither voltage. Accordingly, the topographical imagingand the spectroscopy imaging can occur simultaneously.

FIG. 12 is a block diagram of an STM system including a control feedbackloop that includes a lock-in amplifier that receives a time varyingtip-sample current signal to generate an ac tunneling current byremoving a capacitive current component from the time varying tip-samplecurrent signal and further includes at least one notch filter togenerate a dc current from the time varying tip-sample current signal byremoving the frequency components of the time varying tip-sample currentsignal at the dither voltage signal frequency in some embodimentsaccording to the invention. FIGS. 13A-C show topographic, dc current,and ac current images, respectively, generated simultaneously are atopographical image, using the system shown in FIG. 12 in someembodiments according to the invention.

FIG. 14 a time-varying voltage signal applied to the system of FIG. 12to generate the time varying tip-sample current signal shown, which isprocessed by the lock-in amplifier to isolate the ac tunneling currentby removing the capacitive current component in the time varyingtip-sample current signal in some embodiments according to theinvention. FIG. 15 is an I-V curve for a location on the sampleprocessed by the system shown in FIG. 12 in some embodiments accordingto the invention.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the various embodimentsdescribed herein. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting to otherembodiments. As used herein, the singular forms “a,,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including”, “have” and/or“having” when used herein, specify the presence of stated features,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,integers, steps, operations, elements, components, and/or groupsthereof. Elements described as being “to” perform functions, acts and/oroperations may be configured to or other structured to do so.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which various embodiments describedherein belong. It will be further understood that terms used hereinshould be interpreted as having a meaning that is consistent with theirmeaning in the context of this specification and the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

As will be appreciated by one of skill in the art, various embodimentsdescribed herein may be embodied as a method, data processing system,and/or computer program product. Furthermore, embodiments may take theform of a computer program product on a tangible computer readablestorage medium having computer program code embodied in the medium thatcan be executed by a computer.

Any combination of one or more computer readable media may be utilized.The computer readable media may be a computer readable signal medium ora computer readable storage medium. A computer readable storage mediummay be, for example, but not limited to, an electronic, magnetic,optical, electromagnetic, infrared, or semiconductor system, apparatus,or device, or any suitable combination of the foregoing. More specificexamples (a non-exhaustive list) of the computer readable storage mediumwould include the following: a portable computer diskette, a hard disk,a random access memory (RAM), a read-only memory (ROM), an erasableprogrammable read-only memory (EPROM or Flash memory), a portablecompact disc read-only memory (CD-ROM), an optical storage device, amagnetic storage device, or any suitable combination of the foregoing.In the context of this document, a computer readable storage medium maybe any tangible medium that can contain, or store a program for use byor in connection with an instruction execution system, apparatus, ordevice.

A computer readable signal medium may include a propagated data signalwith computer readable program code embodied therein, for example, inbaseband or as part of a carrier wave. Such a propagated signal may takeany of a variety of forms, including, but not limited to,electro-magnetic, optical, or any suitable combination thereof. Acomputer readable signal medium may be any computer readable medium thatis not a computer readable storage medium and that can communicate,propagate, or transport a program for use by or in connection with aninstruction execution system, apparatus, or device. Program codeembodied on a computer readable signal medium may be transmitted usingany appropriate medium, including but not limited to wireless, wired,optical fiber cable, RF, etc., or any suitable combination of theforegoing.

Computer program code for carrying out operations for aspects of thepresent disclosure may be written in any combination of one or moreprogramming languages, including an object oriented programming languagesuch as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C #, VB.NET,Python or the like, conventional procedural programming languages, suchas the “C” programming language, Visual Basic, Fortran 2003, Perl, COBOL2002, PHP, ABAP, dynamic programming languages such as Python, Ruby andGroovy, or other programming languages, such as a programming languagefor a FPGA, Verilog, System Verilog, Hardware Description language(HDL), and VHDL. The program code may execute entirely on the user'scomputer, partly on the user's computer, as a stand-alone softwarepackage, partly on the user's computer and partly on a remote computeror entirely on the remote computer or server. In the latter scenario,the remote computer may be connected to the user's computer through anytype of network, including a local area network (LAN) or a wide areanetwork (WAN), or the connection may be made to an external computer(for example, through the Internet using an Internet Service Provider)or in a cloud computer environment or offered as a service such as aSoftware as a Service (SaaS).

Some embodiments are described herein with reference to flowchartillustrations and/or block diagrams of methods, systems and computerprogram products according to embodiments. It will be understood thateach block of the flowchart illustrations and/or block diagrams, andcombinations of blocks in the flowchart illustrations and/or blockdiagrams, can be implemented by computer program instructions. Thesecomputer program instructions may be provided to a processor of ageneral purpose computer, special purpose computer, or otherprogrammable data processing apparatus to produce a machine, such thatthe instructions, which execute via the processor of the computer orother programmable data processing apparatus, create a mechanism forimplementing the functions/acts specified in the flowchart and/or blockdiagram block or blocks.

These computer program instructions may also be stored in a computerreadable medium that when executed can direct a computer, otherprogrammable data processing apparatus, or other devices to function ina particular manner, such that the instructions when stored in thecomputer readable medium produce an article of manufacture includinginstructions which when executed, cause a computer to implement thefunction/act specified in the flowchart and/or block diagram block orblocks. The computer program instructions may also be loaded onto acomputer, other programmable instruction execution apparatus, or otherdevices to cause a series of operational steps to be performed on thecomputer, other programmable apparatuses or other devices to produce acomputer implemented process such that the instructions which execute onthe computer or other programmable apparatus provide processes forimplementing the functions/acts specified in the flowchart and/or blockdiagram block or blocks.

It is to be understood that the functions/acts noted in the blocks mayoccur out of the order noted in the operational illustrations. Forexample, two blocks shown in succession may in fact be executedsubstantially concurrently or the blocks may sometimes be executed inthe reverse order, depending upon the functionality/acts involved.Although some of the diagrams include arrows on communication paths toshow a primary direction of communication, it is to be understood thatcommunication may occur in the opposite direction to the depictedarrows.

Many different embodiments have been disclosed herein, in connectionwith the above description and the drawings. It will be understood thatit would be unduly repetitious and obfuscating to literally describe andillustrate every combination and subcombination of these embodiments.Accordingly, all embodiments can be combined in any way and/orcombination, and the present specification, including the drawings,shall support claims to any such combination or subcombination.

What is claimed:
 1. A scanning tunneling device comprising: a scanningtunneling tip configured to receive a bias voltage with respect to asample to be processed by the scanning tunneling device, the biasvoltage modulated with a dither voltage at a dither frequency and adither amplitude; and a control system, connected to a z-actuator and anx-y scanner, the control system configured to: receive a time varyingtip-sample current signal, including components at the dither frequency,tunneling between the tip and the sample; and provide the time varyingtip-sample current signal as a feedback signal in the control system. 2.The scanning tunneling device of claim 1 wherein the control system isfurther configured to filter the time varying tip-sample current signalto attenuate the components at the dither frequency to provide afiltered tip-sample current signal as the feedback signal to a controlfeedback loop of the control system.
 3. The scanning tunneling device ofclaim 2 wherein the control feedback loop has an associated operatingbandwidth including an upper frequency limit that is less than thedither frequency.
 4. The scanning tunneling device of claim 1 whereinthe time varying tip-sample current signal comprises a tunneling currentsignal that is in-phase with the bias voltage modulated with the dithervoltage and a capacitive current signal that is 90 degrees out of phasewith the bias voltage modulated with the dither voltage.
 5. The scanningtunneling device of claim 4 wherein the scanning tunneling device isconfigured as a scanning tunneling lithography instrument wherein thecontrol system is configured to: operate the x-y scanner to position thetip opposite a location on a surface of the sample; monitor for anindication of a change in height of the tip above the surface at thelocation; and. (a) increment a present value of the dither amplitude toramp up the bias voltage modulated with a dither voltage at the locationwhile monitoring for the indication of the change in height.
 6. Thescanning tunneling device of claim 5 wherein the control system isconfigured to: (b) indicate desorption of an atom terminating thesurface at the location responsive to detecting the indication of thechange in the height being greater than a threshold value.
 7. Thescanning tunneling device of claim 6 wherein the control system isconfigured to: return the dither amplitude to a value of about zerovolts; and actuate the x-y scanner to position the tip opposite a nextlocation on the surface of the sample responsive to determining thatadditional positions remain to be processed.
 8. The scanning tunnelingdevice of claim 6 wherein the control system is configured to: (c)indicate lack of desorption of an atom terminating the surface at thelocation responsive to detecting the indication of the change in theheight being less than the threshold value; and perform operations(a)-(c) until the dither amplitude reaches a final value.
 9. Thescanning tunneling device of claim 4 wherein the scanning tunnelingdevice is configured as a scanning tunneling lithography instrumentwherein the control system is configured to: operate the x-y scanner toposition the tip opposite a location on a surface of the sample; monitorfor an indication of a change in the time varying tip-sample currentsignal; and. (a) increment a present value of the dither amplitude toramp up the bias voltage modulated with a dither voltage at the locationwhile monitoring for the indication of the change in the time varyingtip-sample current signal.
 10. The scanning tunneling device of claim 9wherein the control system is configured to: (b) indicate desorption ofan atom terminating the surface at the location responsive to detectingthe indication of the change in the time varying tip-sample currentsignal being greater than a threshold value.
 11. The scanning tunnelingdevice of claim 10 wherein the control system is configured to: returnthe dither amplitude to a value of about zero volts; and operate the x-yscanner to position the tip opposite a next location on the surface ofthe sample responsive to determining that additional positions remain tobe processed.
 12. The scanning tunneling device of claim 10 wherein thecontrol system is configured to: (c) indicate lack of desorption of anatom terminating the surface at the location responsive to detecting theindication of the change in the time varying tip-sample current signalbeing less than the threshold value; and perform operations (a)-(c)until the dither amplitude reaches a final value.
 13. The scanningtunneling device of claim 4 wherein the scanning tunneling device isconfigured as a scanning tunneling microscope instrument wherein thecontrol system is configured to: (a) operate the x-y scanner to positionthe tip opposite a location on a surface of the sample; (b) measure timevarying tip-sample current signal; (c) determine a measured current fromthe time varying tip-sample current signal; (d) adjust a position of thetip above the surface by a controller, which sends a command sinal to az-actuator to maintain the measured current signal at a predefined valuewithin a control frequency bandwidth of a control feedback loop of thecontrol system; (e) determine a relative height of the tip based on thecommand signal of the controller.
 14. The scanning tunneling device ofclaim 13 wherein the measured current comprises a measured amplitude ofcapacitive current, a measured amplitude of time varying AC tunnelingcurrent at a fundamental frequency or higher harmonics, or a measured DCtunneling current.
 15. The scanning tunneling device of claim 14 whereinthe control system is configured to: operate the x-y scanner to move thetip approximately parallel to the surface at a set of x-y positions onthe surface to provide while carrying out operations (a)-(e).
 16. Thescanning tunneling device of claim 15 wherein the control system isconfigured to: measure the time-varying AC tunneling current as afunction of voltage to provide I-V curve data for each position includedin the set of x-y positions, corresponding to an image pixel in ascanned image.